JPH0367347B2 - - Google Patents

Info

Publication number
JPH0367347B2
JPH0367347B2 JP59257368A JP25736884A JPH0367347B2 JP H0367347 B2 JPH0367347 B2 JP H0367347B2 JP 59257368 A JP59257368 A JP 59257368A JP 25736884 A JP25736884 A JP 25736884A JP H0367347 B2 JPH0367347 B2 JP H0367347B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
layer
type semiconductor
well region
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59257368A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61136254A (ja
Inventor
Ryota Kasai
Takahiro Aoki
Kennosuke Fukami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP59257368A priority Critical patent/JPS61136254A/ja
Publication of JPS61136254A publication Critical patent/JPS61136254A/ja
Publication of JPH0367347B2 publication Critical patent/JPH0367347B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors

Landscapes

  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP59257368A 1984-12-07 1984-12-07 複合形半導体装置 Granted JPS61136254A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59257368A JPS61136254A (ja) 1984-12-07 1984-12-07 複合形半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59257368A JPS61136254A (ja) 1984-12-07 1984-12-07 複合形半導体装置

Publications (2)

Publication Number Publication Date
JPS61136254A JPS61136254A (ja) 1986-06-24
JPH0367347B2 true JPH0367347B2 (en]) 1991-10-22

Family

ID=17305412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59257368A Granted JPS61136254A (ja) 1984-12-07 1984-12-07 複合形半導体装置

Country Status (1)

Country Link
JP (1) JPS61136254A (en])

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5892287A (en) * 1997-08-18 1999-04-06 Texas Instruments Semiconductor device including stacked chips having metal patterned on circuit surface and on edge side of chip

Also Published As

Publication number Publication date
JPS61136254A (ja) 1986-06-24

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term